- Title
- A K-to-Ka Band Ultra Wideband Power Amplifier in 180-Nm SiGe Technology
- Creator
- He, Yuxin; Meng, Fanyi; Kok, Chiang Liang; Ho, Chee Kit Ho
- Relation
- 2024 IEEE International Conference on IC Design and Technology (ICICDT). Proceedings of the 2024 IEEE International Conference on IC Design and Technology, ICICDT 2024 (Singapore 25-27 September, 2024)
- Publisher Link
- http://dx.doi.org/10.1109/ICICDT63592.2024.10717834
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Resource Type
- conference paper
- Date
- 2024
- Description
- This paper presents a power amplifier (PA) fabricated in a 180nm Huahong SiGe technology, which can fully cover the K- and Ka-band and delivers a saturated output power of about 18 dBm. The amplifier adopts Cascode structure to achieve higher output power, better reverse isolation and stability. The two-stage differential cascade structure, combined with the transformer for good circuit matching, improves the overall circuit gain. At the same time, the cross-coupling capacitor is used to neutralize the Miller effect, and the negative feedback is introduced to further improve the circuit stability. Measurements of the PA show a 3dB-bandwith of the output power from 18GHz to 40GHz. The maximum output power is 17.8dBm at 1dB-compression-point (P1dB) and 18.9dBm in saturation. Togeher with the peak gain of 20 dB high power added efficiencies (PAEs) of 10% in saturation are achieved.
- Subject
- power amplifier; ultra-wideband; cascode; SiGe process; transformer
- Identifier
- http://hdl.handle.net/1959.13/1516773
- Identifier
- uon:57027
- Identifier
- ISBN:9798331517137
- Language
- eng
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